Band offset determination in the strained-layer InSb/AlxIn1-xSb system
Identifieur interne : 011F06 ( Main/Repository ); précédent : 011F05; suivant : 011F07Band offset determination in the strained-layer InSb/AlxIn1-xSb system
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Abstract
We use interband exciton transitions in parabolically graded quantum wells to measure the band offset at the InSb/AlxIn1-xSb interface. The method we use is based on similar studies in the GaAs/AlxGa1-xAs system but modified to reflect the strong nonparabolicity and strain of the InSb/AlxIn1-xSb system. We find a conduction band offset ratio of 0.62±0.04 for Al concentrations in the range 2%-12%. The observed lack of variation of the offset with Al concentration suggests a lack of strain dependence in the InSb/AlxIn1-xSb system for practical Al concentrations. © 2000 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Band offset determination in the strained-layer InSb/Al<sub>x</sub>In<sub>1-x</sub>Sb system</title><author><name sortKey="Dai, N" uniqKey="Dai N">N. Dai</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, The University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, The University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Khodaparast, G A" uniqKey="Khodaparast G">G. A. Khodaparast</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, The University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, The University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Brown, F" uniqKey="Brown F">F. Brown</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, The University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, The University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Doezema, R E" uniqKey="Doezema R">R. E. Doezema</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, The University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, The University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Chung, S J" uniqKey="Chung S">S. J. Chung</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, The University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, The University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Santos, M B" uniqKey="Santos M">M. B. Santos</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, The University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, The University of Oklahoma, Norman</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0290640</idno><date when="2000-06-26">2000-06-26</date><idno type="stanalyst">PASCAL 00-0290640 AIP</idno><idno type="RBID">Pascal:00-0290640</idno><idno type="wicri:Area/Main/Corpus">012E02</idno><idno type="wicri:Area/Main/Repository">011F06</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Conduction bands</term><term>Excitons</term><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Internal stresses</term><term>Semiconductor quantum wells</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7320D</term><term>7320M</term><term>7135C</term><term>Etude expérimentale</term><term>Indium composé</term><term>Aluminium composé</term><term>Semiconducteur III-V</term><term>Puits quantique semiconducteur</term><term>Bande conduction</term><term>Exciton</term><term>Contrainte interne</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We use interband exciton transitions in parabolically graded quantum wells to measure the band offset at the InSb/Al<sub>x</sub>In<sub>1-x</sub>Sb interface. The method we use is based on similar studies in the GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As system but modified to reflect the strong nonparabolicity and strain of the InSb/Al<sub>x</sub>In<sub>1-x</sub>Sb system. We find a conduction band offset ratio of 0.62±0.04 for Al concentrations in the range 2%-12%. The observed lack of variation of the offset with Al concentration suggests a lack of strain dependence in the InSb/Al<sub>x</sub>In<sub>1-x</sub>Sb system for practical Al concentrations. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>76</s2></fA05><fA06><s2>26</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Band offset determination in the strained-layer InSb/Al<sub>x</sub>In<sub>1-x</sub>Sb system</s1></fA08><fA11 i1="01" i2="1"><s1>DAI (N.)</s1></fA11><fA11 i1="02" i2="1"><s1>KHODAPARAST (G. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>BROWN (F.)</s1></fA11><fA11 i1="04" i2="1"><s1>DOEZEMA (R. E.)</s1></fA11><fA11 i1="05" i2="1"><s1>CHUNG (S. J.)</s1></fA11><fA11 i1="06" i2="1"><s1>SANTOS (M. B.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, The University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>3905-3907</s1></fA20><fA21><s1>2000-06-26</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0290640</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We use interband exciton transitions in parabolically graded quantum wells to measure the band offset at the InSb/Al<sub>x</sub>In<sub>1-x</sub>Sb interface. The method we use is based on similar studies in the GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As system but modified to reflect the strong nonparabolicity and strain of the InSb/Al<sub>x</sub>In<sub>1-x</sub>Sb system. We find a conduction band offset ratio of 0.62±0.04 for Al concentrations in the range 2%-12%. The observed lack of variation of the offset with Al concentration suggests a lack of strain dependence in the InSb/Al<sub>x</sub>In<sub>1-x</sub>Sb system for practical Al concentrations. © 2000 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C20D</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C20M</s0></fC02><fC02 i1="03" i2="3"><s0>001B70A35</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7320D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7320M</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7135C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Aluminium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Aluminium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Bande conduction</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Conduction bands</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Exciton</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Excitons</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Contrainte interne</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Internal stresses</s0></fC03><fN21><s1>192</s1></fN21><fN47 i1="01" i2="1"><s0>0025M000062</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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